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M32L1632512A - 256K x 32-Bit x 2-Bank SGRAM

Description

The M32L1632512A is 16, 777, 216 bits synchronous high data rate Dynamic RAM organized as 2 x 262, 144 words by 32 bits, fabricated with ESMT’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Features

  • at 3.3V power supply y JEDEC standard y LVTTL . D compatible with multiplexed address w bank / Pulse RAS y Dual yw MRS cycle with address key programs w - CAS Latency ( 2, 3 ) y y y y y y - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM 0-3 for byte masking Auto & self refresh 32ms refresh period (2K cycle) 100 pin QFP ESMT M32L1632512A 256K x 32 Bit.

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Datasheet preview – M32L1632512A

Datasheet Details

Part number M32L1632512A
Manufacturer Elite Semiconductor
File Size 1.09 MB
Description 256K x 32-Bit x 2-Bank SGRAM
Datasheet download datasheet M32L1632512A Datasheet
Additional preview pages of the M32L1632512A datasheet.

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    Full PDF Text Transcription

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    m o .c U SGRAM 4 t e e h S a FEATURES at 3.3V power supply y JEDEC standard y LVTTL .D compatible with multiplexed address w bank / Pulse RAS y Dual yw MRS cycle with address key programs w - CAS Latency ( 2, 3 ) y y y y y y - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM 0-3 for byte masking Auto & self refresh 32ms refresh period (2K cycle) 100 pin QFP ESMT M32L1632512A 256K x 32 Bit x 2 Banks Synchronous Graphic RAM GENERAL DESCRIPTION The M32L1632512A is 16, 777, 216 bits synchronous high data rate Dynamic RAM organized as 2 x 262, 144 words by 32 bits, fabricated with ESMT’s high performance CMOS technology.
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