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EBE11UD8ABFV - 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM

Datasheet Summary

Description

The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package.

Read and write operations are performed at the cross points of the CK and the /CK.

Features

  • 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free.
  • 1.85V power supply.
  • Data rate: 667Mbps/600Mbps (max. ).
  • SSTL_18 compatible I/O.
  • Double-data-rate architecture: two data transfers per clock cycle.
  • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
  • DQS is edge aligned with data for READs: cent.

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Datasheet Details

Part number EBE11UD8ABFV
Manufacturer Elpida Memory
File Size 229.74 KB
Description 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM
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PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV (128M words × 64 bits, 2 Ranks) Description The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4 bits prefetch-pipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology.
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