EBE11UD8AEFA-6 - 1GB Unbuffered DDR2 SDRAM DIMM

Datasheet Summary

Description

The EBE11UD8AEFA is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package.

Read and write operations are performed at the cross points of the CK and the /CK.

Features

240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free.
Power supply: VDD = 1.8V± 0.1V.
Data rate: 667Mbps (max. ).
SSTL_18 compatible I/O.
Double-data-rate architecture: two data transfers per clock cycle.
Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
DQS is edge aligned with data for READs:.

Elpida Memory

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Datasheet Details

Part number	EBE11UD8AEFA-6
Manufacturer	Elpida Memory
File Size	229.53 KB
Description	1GB Unbuffered DDR2 SDRAM DIMM
Datasheet	EBE11UD8AEFA-6 Datasheet
Additional preview pages of the EBE11UD8AEFA-6 datasheet.

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DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM EBE11UD8AEFA-6 (128M words × 64 bits, 2 Ranks) Description The EBE11UD8AEFA is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 4 bits prefetchpipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology.

Published: Mar 21, 2010 |