EDD2508AKTA-5-E Datasheet | Elpida Memory

( Data Sheet : .. ) PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2508AKTA-5-E (32M words × 8 bits, DDR400) Description The EDD2508AKTA-5 is a 256M bits DDR SDRAM organized as 8,388,608 words × 8 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. It is packaged in 66-pin plastic TSOP (II). Pin Configurations /xxx indicates active low signal. 66-pin Plastic TSOP(II) VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC /WE /CAS /RAS /CS NC BA0 BA1 A10(AP) A0 A1 A2 A3 VDD Features - Power supply: VDD, VDDQ = 2.6V ± 0.1V - Data rate: 400Mbps (max.) - Double Data Rate architecture; two data transfers per clock cycle - Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver - Data inputs, outputs, and DM are synchronized with DQS - 4 internal banks for concurrent operation - DQS is edge aligned with data for READs; center aligned with data for WRITEs - Differential clock inputs (CK and /CK) - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Data mask (DM) for write data - Auto precharge option for each burst access - SSTL_2 patible I/O - Programmable burst length (BL): 2, 4, 8 - Programmable /CAS latency (CL): 3 - Programmable output driver strength: normal/weak - Refresh cycles: 8192 refresh cycles/64ms  7.8µs maximum average periodic refresh interval - 2 variations of refresh  Auto refresh  Self refresh - TSOP (II) package with lead free solder...