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EDD5104ADTA - 512M bits DDR SDRAM

Download the EDD5104ADTA datasheet PDF. This datasheet also covers the EDD5108ADTA variant, as both devices belong to the same 512m bits ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The EDD5104AD, the EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM.

Read and write operations are performed at the cross points of the CK and the /CK.

This highspeed data transfer is realized by the 2 bits prefetchpipelined architecture.

Features

  • Power supply: VDD, VDDQ = 2.5V ± 0.2V.
  • Data Rate: 333Mbps/266Mbps (max. ).
  • Double Data Rate architecture; two data transfers per clock cycle.
  • Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver.
  • Data inputs, outputs, and DM are synchronized with DQS.
  • 4 internal banks for concurrent operation.
  • DQS is edge aligned with data for READs; center aligned with data for WRITEs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDD5108ADTA_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EDD5104ADTA
Manufacturer Elpida Memory
File Size 530.60 KB
Description 512M bits DDR SDRAM
Datasheet download datasheet EDD5104ADTA Datasheet

📁 Similar Datasheet

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Other Datasheets by Elpida Memory

Part Number Description
EDD5104ADTA-E 512M bits DDR SDRAM
EDD5104ABTA 512M bits DDR SDRAM
EDD5108ABTA 512M bits DDR SDRAM
EDD5108ADTA 512M bits DDR SDRAM
EDD5108ADTA-E 512M bits DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET 512M bits DDR SDRAM EDD5104ADTA (128M words × 4 bits) EDD5108ADTA (64M words × 8 bits) EDD5116ADTA (32M words × 16 bits) Description The EDD5104AD, the EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 2 bits prefetchpipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. It is packaged in standard 66-pin plastic TSOP (II). Pin Configurations /xxx indicates active low signal.
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