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EDE5116ABSE Datasheet 512M bits DDR2 SDRAM

Manufacturer: Elpida Memory

Overview: DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE (128M words × 4 bits) EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16.

Download the EDE5116ABSE datasheet PDF. This datasheet also includes the EDE5108ABSE variant, as both parts are published together in a single manufacturer document.

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Datasheet Details

Part number EDE5116ABSE
Manufacturer Elpida Memory
File Size 697.92 KB
Description 512M bits DDR2 SDRAM
Download EDE5116ABSE Download (PDF)

General Description

The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.

The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.

They are packaged in 64-ball FBGA (µBGA) package.

Key Features

  • Power supply: VDD, VDDQ = 1.8V ± 0.1V.
  • Double-data-rate architecture: two data transfers per clock cycle.
  • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
  • DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transitions.
  • Commands entered on e.

More Datasheets from Elpida Memory

Part Number Description
EDE5116GBSA 512M bits DDR-II SDRAM
EDE5104ABSE 512M bits DDR2 SDRAM
EDE5104AESK (EDE510xAESK) 512M bits DDR2 SDRAM
EDE5104AGSE (EDE510xAGSE) 512M bits DDR2 SDRAM
EDE5104GBSA 512M bits DDR-II SDRAM
EDE5108ABSE (EDE51xxABSE) 512M bits DDR2 SDRAM
EDE5108AESK (EDE510xAESK) 512M bits DDR2 SDRAM
EDE5108AGBG 512M bits DDR2 SDRAM
EDE5108AGSE (EDE510xAGSE) 512M bits DDR2 SDRAM
EDE5108GBSA 512M bits DDR-II SDRAM