Description
The EDS1216AABH, EDS1216CABH are 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks.
Features
- 3.3V and 2.5V power supply Clock frequency: 133MHz (max. ) Single pulsed /RAS ×16 organization 4 banks can operate simultaneously and independently.
- Burst read/write operation and burst read/single write operation capability.
- Programmable burst length (BL): 1, 2, 4, 8, full page.
- 2 variations of burst sequence Sequential (BL = 1, 2, 4, 8, full page) Interleave (BL = 1, 2, 4, 8).
- Programmable /CAS latency (CL.
EDS1216AABH Datasheet
