EDS1216CABH
Description
The EDS1216AABH, EDS1216CABH are 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks.
Key Features
- Burst read/write operation and burst read/single write operation capability
- Programmable burst length (BL): 1, 2, 4, 8, full page
- 2 variations of burst sequence Sequential (BL = 1, 2, 4, 8, full page) Interleave (BL = 1, 2, 4, 8)
- Programmable /CAS latency (CL): 2, 3
- Refresh cycles: 4096 refresh cycles/64ms
- 2 variations of refresh Auto refresh Self refresh
