EDS1216CABH Description
The EDS1216AABH, EDS1216CABH are 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. Supply voltages are 3.3V (EDS1216AABH) and 2.5V (EDS1216CABH).
EDS1216CABH Key Features
- 3.3V and 2.5V power supply Clock frequency: 133MHz (max.) Single pulsed /RAS ×16 organization 4 banks can operate simult
- Burst read/write operation and burst read/single write operation capability
- Programmable burst length (BL): 1, 2, 4, 8, full page
- Programmable /CAS latency (CL): 2, 3
- Byte control by UDQM and LDQM
- Refresh cycles: 4096 refresh cycles/64ms
- 2 variations of refresh Auto refresh Self refresh
- FBGA package with lead free solder (Sn-Ag-Cu)
- EDS1216AABH, EDS1216CABH
- EDS1216AABH, EDS1216CABH