Datasheet4U Logo Datasheet4U.com

EDS2532CABJ - 256M bits SDRAM

Features

  • B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC A3 A6 NC A9 NC VSS F VSS DQM3.
  • ×32 organization.
  • Single pulsed /RAS.
  • Burst read/write operation and burst read/single write operation capability.
  • Byte control by DQM Document No. E0460E40 (Ver. 4.0) Date Published December 2005 (K) Japan Printed in Japan URL: http://www. elpida. com L G A4 A5 A8 CKE NC H A7 J CLK K DQM1 /WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ Pr L M N P R VDDQ DQ8 VSSQ.

📥 Download Datasheet

Datasheet preview – EDS2532CABJ

Datasheet Details

Part number EDS2532CABJ
Manufacturer Elpida Memory
File Size 700.39 KB
Description 256M bits SDRAM
Datasheet download datasheet EDS2532CABJ Datasheet
Additional preview pages of the EDS2532CABJ datasheet.

📁 Similar Datasheet

  • EDS801 - Display Module (ETC)
  • EDS802 - Display (ETC)
  • EDS803 - Display Module (DALIAN GOOD DISPLAY)
  • EDS803 - Display Module (ETC)
  • EDS805 - Display Module (DALIAN GOOD DISPLAY)
  • EDS805 - Display Module (ETC)
Other Datasheets by Elpida Memory

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DATA SHEET 256M bits SDRAM EDS2532CABJ (8M words × 32 bits) Specifications • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: 90-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz/100MHz (max.) • 2KB page size ⎯ Row address: A0 to A11 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVTTL • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT): ⎯ Sequential (1, 2, 4, 8, full page) ⎯ Interleave (1, 2, 4, 8) • /CAS Latency (CL): 2, 3 • Precharge: auto precharge operation for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms ⎯ Average refresh period: 15.
Published: |