EDS2532EGBH-TT Datasheet | Elpida Memory

Features - ×32 organization - Single pulsed /RAS - Burst read/write operation and burst read/single write operation capability - Byte control by DQM - Wide temperature range  TA = - 20°C to +85°C A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection Document No. E1200E40 (Ver. 4.0) Date Published December 2008 (K) Japan Printed in Japan URL: http://.elpida. Elpida Memory, Inc. 2007-2008 .. Ordering Information Part number EDS2532EGBH-7BTT-F Supply voltage Organization (words × bits) Internal banks 8M × 32 4 Clock frequency MHz (max.) 166 133 /CAS latency 3 3 Package 90-ball FBGA EDS2532EGBH-6DTT-F 1.8V Part Number E D S 25 32 E G BH - 6D TT - F Elpida Memory Type D: Monolithic Device Environment Code F: Lead Free (Ro HS pliant) and Halogen Free Spec Detail TT: WTR (- 20°C to +85°C) Product Family S: SDRAM Density / Bank 25: 256Mb/4-bank Organization 32: x32 Power Suply, Interface E: 1.8V, LVCMOS Die Rev. Speed 6D: 166MHz/CL3 7B: 133MHz/CL3 Package BH: FBGA Preliminary Data Sheet E1200E40 (Ver. 4.0) .. CONTENTS Specifications...