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EDS2532EGBH-TT Datasheet 256M bits SDRAM WTR

Manufacturer: Elpida Memory

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Overview

www.DataSheet4U.com PRELIMINARY DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EGBH-TT (8M words × 32 bits) Specifications • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: 90-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 166MHz/133MHz (max.) • 2KB page size  Row address: A0 to A11  Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT):  Sequential (1, 2, 4, 8, full page)  Interleave (1, 2, 4, 8) • /CAS Latency (CL): 3 • Precharge: auto precharge option for each burst access • Driver strength: normal, 1/2, 1/4, 1/8 • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms  Average refresh period: 15.6µs • Operating ambient temperature range  TA = –20°C to +85°C Pin Configurations /xxx indicates active low signal.

Key Features

  • ×32 organization.
  • Single pulsed /RAS.
  • Burst read/write operation and burst read/single write operation capability.
  • Byte control by DQM.
  • Wide temperature range  TA =.
  • 20°C to +85°C A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Pow.

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