EDS2532EGBH-TT - 256M bits SDRAM WTR

Features

×32 organization.
Single pulsed /RAS.
Burst read/write operation and burst read/single write operation capability.
Byte control by DQM.
Wide temperature range  TA =.
20°C to +85°C A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Pow.

Elpida Memory

Datasheet Details

Part number	EDS2532EGBH-TT
Manufacturer	Elpida Memory
File Size	784.31 KB
Description	256M bits SDRAM WTR
Datasheet	EDS2532EGBH-TT Datasheet
Additional preview pages of the EDS2532EGBH-TT datasheet.

📁 Similar Datasheet

EDS801 - Display Module (ETC)
EDS802 - Display (ETC)
EDS803 - Display Module (DALIAN GOOD DISPLAY)
EDS803 - Display Module (ETC)
EDS805 - Display Module (DALIAN GOOD DISPLAY)
EDS805 - Display Module (ETC)

Other Datasheets by Elpida Memory

EDS2532EEBH-75 - 256M bits SDRAM
EDS2532EEBH-75TT - 256M bits SDRAM WTR
EDS2532EEBH-9A - 256M bits SDRAM
EDS2532EEBH-9ATT - 256M bits SDRAM WTR
EDS2532EESL-75 - 256M bits SDRAM
EDS2532AABH-1AR2 - 256M bits SDRAM
EDS2532AABH-6B - 256M bits SDRAM
EDS2532AABJ-75 - 256M bits SDRAM

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com PRELIMINARY DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2532EGBH-TT (8M words × 32 bits) Specifications • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: 90-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 166MHz/133MHz (max.

Published: Oct 1, 2010 |