EDS6416CHTA Datasheet | Elpida Memory

Description The EDS6416AHTA, EDS6416CHTA are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with .. the positive edge of the clock. Supply voltages are 3.3V (EDS6416AHTA) and 2.5V (EDS6416CHTA). It is packaged in 54-pin plastic TSOP (II). Pin Configurations /xxx indicate active low signal. 54-pin Plastic TSOP (II) VDD DQ0 VDDQ DQ1 DQ2 VSSQ Features - - - - - 3.3V and 2.5V power supply Clock frequency: 166MHz/133MHz (max.) Single pulsed /RAS ×16 organization 4 banks can operate simultaneously and independently - Burst read/write operation and burst read/single write operation capability - 2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8, full page)  Interleave (BL = 1, 2, 4, 8) - Programmable /CAS latency (CL): 2, 3 - Byte control by UDQM and LDQM - Refresh cycles: 4096 refresh cycles/64ms - 2 variations of refresh  Auto refresh  Self refresh - TSOP (II) package with lead free solder (Sn-Bi)  Ro HS pliant DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS (Top view) A0 to A11 BA0, BA1 DQ0 to DQ15 /CS /RAS /CAS /WE LDQM, UDQM CKE CLK VDD VSS VDDQ VSSQ NC Address input Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable Input/output mask Clock enable Clock...