MC-4R512FKE6D Datasheet PDF - Elpida Memory Direct Rambus DRAM RIMM Module Specs

MC-4R512FKE6D - Direct Rambus DRAM RIMM Module

Datasheet Summary

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

Features

184 edge connector pads with 1mm pad spacing.
512 MB Direct RDRAM storage.
Each RDRAM has 32 banks, for 512 banks total on module.
Gold plated contacts.
RDRAMs use Chip Scale Package (CSP).
Serial Presence Detect support.
Operates from a 2.5 V supply.
Powerdown self refresh modes.
Separate Row and Column buses for higher efficiency.
Over Drive Factor (ODF) support The information in this document is subj.

Datasheet Details

Part number	MC-4R512FKE6D
Manufacturer	Elpida Memory
File Size	132.33 KB
Description	Direct Rambus DRAM RIMM Module
Datasheet	MC-4R512FKE6D Datasheet
Additional preview pages of the MC-4R512FKE6D datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4R512FKE6D Direct Rambus DRAM RIMMTM Module 512M-BYTE (256M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R512FKE6D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Published: Apr 26, 2005 |