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EM44CM1688LBA - 1Gb Double DATA RATE-2 SDRAM

General Description

JEDEC Standard VDD/VDDQ=1.8V ± 0.1V.

All inputs and outputs are compatible with SSTL_18 interface.

Fully differential clock inputs (CK,/CK) operation.

8 Banks Posted CAS

Burst Length: 4 and 8.

Programmable CAS Latency (CL): 3, 4

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Datasheet Details

Part number EM44CM1688LBA
Manufacturer Eorex
File Size 491.52 KB
Description 1Gb Double DATA RATE-2 SDRAM
Datasheet download datasheet EM44CM1688LBA Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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eorex EM44CM1688LBA 1Gb (8M×8Bank×16) Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 8 Banks • Posted CAS • Burst Length: 4 and 8. • Programmable CAS Latency (CL): 3, 4 and 5. • Programmable Additive Latency (AL): 0, 1, 2, 3 and 4. • Write Latency (WL) =Read Latency (RL) -1. • Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL) • Bi-directional Differential Data Strobe (DQS). • Data inputs on DQS centers when write. • Data outputs on DQS, /DQS edges when read. • On chip DLL align DQ, DQS and /DQS transition with CK transition. • DM mask write data-in at the both rising and falling edges of the data strobe.