PTB20151 - 45 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor

Datasheet Summary

Description

The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz.

Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems.

Ericsson

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Datasheet Details

Part number	PTB20151
Manufacturer	Ericsson
File Size	639.55 KB
Description	45 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor
Datasheet	PTB20151 Datasheet
Additional preview pages of the PTB20151 datasheet.

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e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 45 Watts, 1.8–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 45 W Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 Output Power (Watts) 201 51 LOT COD E VCC = 26 V ICQ = 100 mA f = 2.

Published: Apr 16, 2005 |