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PTB20156 - 8 Watts/ 1350-1850 MHz Microwave Power Transistor

Datasheet Summary

Description

The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz.

Rated at 8 watts minimum output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20156
Manufacturer Ericsson
File Size 43.92 KB
Description 8 Watts/ 1350-1850 MHz Microwave Power Transistor
Datasheet download datasheet PTB20156 Datasheet
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e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride Passivated Typical Gain & Return Loss vs. Frequency 10 8 Gain (dB) (as measured in a broadband circuit) VCC = 22 V Pin = 2.0 W 0 Return Loss (dB) -3 -6 -9 Gain (dB) 6 4 2 Return Loss (dB) 0 1.3 1.4 1.5 1.6 1.7 1.8 1.
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