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PTB20157 - 20 Watts/ 1.35-1.85 GHz RF Power Transistor

Datasheet Summary

Description

The 20157 is an NPN common base RF power transistor intended for 22

26 Vdc class C operation from 1.35 to 1.85 GHz.

Rated at 20 watts minimum output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20157
Manufacturer Ericsson
File Size 45.51 KB
Description 20 Watts/ 1.35-1.85 GHz RF Power Transistor
Datasheet download datasheet PTB20157 Datasheet
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e PTB 20157 20 Watts, 1.35–1.85 GHz RF Power Transistor Description The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 20 Watts, 1.35–1.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 2015 7 LOT COD E VCC = 22 V f = 1.
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