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PTB20170 - 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz.

Rated at 30 watts minimum output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20170
Manufacturer Ericsson
File Size 261.38 KB
Description 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20170 Datasheet
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e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 30 Watts, 1.8–2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 Output Power (Watts) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 2017 LOT COD E 0 VCC = 26 V ICQ = 100 mA f = 2.
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