Datasheet4U Logo Datasheet4U.com

PTB20177 - 150 Watts/ 925-960 MHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz.

Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.

📥 Download Datasheet

Datasheet preview – PTB20177

Datasheet Details

Part number PTB20177
Manufacturer Ericsson
File Size 49.05 KB
Description 150 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20177 Datasheet
Additional preview pages of the PTB20177 datasheet.

📁 Similar Datasheet

  • PTB23001X - NPN microwave power transistors (NXP)
  • PTB23002U - NPN microwave power transistor (NXP)
  • PTB23003X - NPN microwave power transistor (NXP)
  • PTB23003X - NPN microwave power transistors (NXP)
  • PTB23005X - NPN microwave power transistors (NXP)
  • PTB23006U - Microwave power transistor (NXP)
  • PTB100 - Low Profile Slide Potentiometer (Bourns)
  • PTB32001X - NPN microwave power transistors (NXP)
  • PTB32003X - NPN microwave power transistors (NXP)
  • PTB32005X - NPN microwave power transistors (NXP)
Other Datasheets by Ericsson
  • PTB20170 - 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
  • PTB20171 - 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
  • PTB20174 - 90 Watts/ 1400-1600 MHz RF Power Transistor
  • PTB20175 - 55 Watts/ 1.9-2.0 GHz Cellular Radio RF Power Transistor
  • PTB20176 - 5 Watts/ 1.78-1.92 GHz RF Power Transistor
  • PTB20179 - 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
  • PTB20101 - 175 Watts P-Sync/ 470-860 MHz UHF TV Power Transistor
  • PTB20105 - 20 Watts/ 925-960 MHz Cellular Radio RF Power Transistor

Full PDF Text Transcription

Click to expand full text
e PTB 20177 150 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 26 Volt, 960 MHz Characteristics - Output Power = 150 Watts (PEP) - Collector Efficiency = 50 Min at 150 Watts - IMD = -28 dBc Max at 150 Watts (PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated • • • Typical Output Power vs.
Published: |