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PTB20179 - 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz.

Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20179
Manufacturer Ericsson
File Size 201.34 KB
Description 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20179 Datasheet
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Full PDF Text Transcription

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e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 0.4 Watt, 1.8–2.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 Output Power (Watts) 0.8 0.6 0.4 0.2 0.0 0.00 VCC = 26 V IC = 120 mA f = 2.0 GHz 20 17 9 LO TC OD E 0.02 0.04 0.06 0.08 0.10 0.
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