PTB20191 - 12 Watts/ 1.78-1.92 GHz RF Power Transistor

Datasheet Summary

Description

The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz.

It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power.

Ericsson

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Datasheet Details

Part number	PTB20191
Manufacturer	Ericsson
File Size	424.67 KB
Description	12 Watts/ 1.78-1.92 GHz RF Power Transistor
Datasheet	PTB20191 Datasheet
Additional preview pages of the PTB20191 datasheet.

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e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics 26 Volt, 1.9 GHz Characterization - Output Power = 12 W(CW), 15 W(PEP) Internal Input Matching Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 25 Output Power (Watts) 20 15 10 201 91 LOT COD E VCC = 26 V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ICQ = 100 mA f = 1.

Published: Apr 16, 2005 |