Datasheet Summary
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PTB 20191 12 Watts, 1.78- 1.92 GHz RF Power Transistor
Description
The 20191 is a class AB, NPN, mon emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Class AB Characteristics 26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP) Internal Input Matching Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
20 15 10
201 91
LOT COD E
VCC =...