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PTB20195 - 150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz.

Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20195
Manufacturer Ericsson
File Size 47.84 KB
Description 150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20195 Datasheet
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e PTB 20195 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • Class AB Characteristics 26 Volt, 900 MHz Characteristics - Output Power = 150 Watts Min - Collector Efficiency = 50% Min at 150 Watts - Gain = 9 dB Typ Gold Metallization Silicon Nitride Passivated • • Typical Output Power vs.
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