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PTB20193 - 60 Watts/ 1.8-1.9 GHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz.

It is rated at 60 watts minimum output power and may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20193
Manufacturer Ericsson
File Size 519.69 KB
Description 60 Watts/ 1.8-1.9 GHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20193 Datasheet
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e PTB 20193 60 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 60 Watts, 1.8–1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 Output Power (Watts) 60 50 40 30 20 10 1 3 5 7 9 11 13 201 93 LOT COD E VCC = 26 V ICQ = 150 mA f = 1.
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