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EM564161 - 256K x 16 Low Power SRAM

This page provides the datasheet information for the EM564161, a member of the EM5 256K x 16 Low Power SRAM family.

Description

Symbol A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection Overview The EM564161 is a 4,194,304-bit SRAM organized as 262,144 w

Features

  • Single power supply voltage of 2.3V to 3.6V.
  • Power down features using CE1# and CE2.
  • Low power dissipation.
  • Data retention supply voltage: 1.0V to 3.6V.
  • Direct TTL compatibility for all input and output.
  • Wide operating temperature range: -40°C to 85°C.
  • Standby current @ VDD = 3.6 V IDDS2 Typical EM564161BA/BC-70/85 EM564161BA-70E/85E 1 µA 5 µA Maximum 10 µA 80 µA E VDD DQ12 NC A16 D GND DQ11 A17 A7 A EM564161 256K x 16 Low Power SR.

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Datasheet preview – EM564161

Datasheet Details

Part number EM564161
Manufacturer Etron Technology Inc.
File Size 370.92 KB
Description 256K x 16 Low Power SRAM
Datasheet download datasheet EM564161 Datasheet
Additional preview pages of the EM564161 datasheet.
Other Datasheets by Etron Technology Inc.

Full PDF Text Transcription

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EtronTech Features • Single power supply voltage of 2.3V to 3.6V • Power down features using CE1# and CE2 • Low power dissipation • Data retention supply voltage: 1.0V to 3.6V • Direct TTL compatibility for all input and output • Wide operating temperature range: -40°C to 85°C • Standby current @ VDD = 3.6 V IDDS2 Typical EM564161BA/BC-70/85 EM564161BA-70E/85E 1 µA 5 µA Maximum 10 µA 80 µA E VDD DQ12 NC A16 D GND DQ11 A17 A7 A EM564161 256K x 16 Low Power SRAM Preliminary, Rev 2.
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