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EM564166 - 256K x 16 Low Power SRAM

Description

Symbol A0 - A17 DQ0 - DQ15 CE# OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection Overview The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words b

Features

  • Single power supply voltage of 2.3V to 3.6V.
  • Power down features using CE#.
  • Low power dissipation.
  • Data retention supply voltage: 1.0V to 3.6V.
  • Direct TTL compatibility for all input and output.
  • Wide operating temperature range: -40°C to 85°C.
  • Standby current @ VDD = 3.6 V IDDS2 Typical EM564166BC-70/85 EM564166BC-70E/85E 1 µA 5 µA Maximum 10 µA 80 µA D GND DQ11 A17 A7 EM564166 256K x 16 Low Power SRAM Preliminary, Rev 1.0 Pin Conf.

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Datasheet preview – EM564166

Datasheet Details

Part number EM564166
Manufacturer Etron Technology Inc.
File Size 158.49 KB
Description 256K x 16 Low Power SRAM
Datasheet download datasheet EM564166 Datasheet
Additional preview pages of the EM564166 datasheet.

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Full PDF Text Transcription

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EtronTech Features • Single power supply voltage of 2.3V to 3.6V • Power down features using CE# • Low power dissipation • Data retention supply voltage: 1.0V to 3.6V • Direct TTL compatibility for all input and output • Wide operating temperature range: -40°C to 85°C • Standby current @ VDD = 3.6 V IDDS2 Typical EM564166BC-70/85 EM564166BC-70E/85E 1 µA 5 µA Maximum 10 µA 80 µA D GND DQ11 A17 A7 EM564166 256K x 16 Low Power SRAM Preliminary, Rev 1.
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