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EM658160 - 4M x 16 DDR Synchronous DRAM

Description

Table 1.

Pin Details of EM658160 Description Differential Clock: CK, /CK are driven by the system clock.

All SDRAM input signals are sampled on the positive edge of CK.

Features

  • Fast clock rate: 300/285/250/200/166/143/125MHz Differential Clock CK & /CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 1M x 16-bit for each bank Programmable Mode and Extended Mode registers - /CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte write mask control.
  • DM Write Latency = 0.
  • Auto Refresh and Self Refresh.
  • 4096 refres.

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Datasheet Details

Part number EM658160
Manufacturer Etron Technology Inc.
File Size 158.01 KB
Description 4M x 16 DDR Synchronous DRAM
Datasheet download datasheet EM658160 Datasheet
Additional preview pages of the EM658160 datasheet.

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Full PDF Text Transcription

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EtronTech Etron Confidential EM658160 (Rev. 1.1 Jan./2002) 4M x 16 DDR Synchronous DRAM (SDRAM) Features Fast clock rate: 300/285/250/200/166/143/125MHz Differential Clock CK & /CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 1M x 16-bit for each bank Programmable Mode and Extended Mode registers - /CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved • Individual byte write mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 4096 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD = 3.3V ± 0.3V VDDQ = 2.5V ± 0.2V • Interface: SSTL_2 I/O Interface • Package: 66 Pin TSOP II, 0.
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