Part EM658160
Description 4M x 16 DDR Synchronous DRAM
Manufacturer Etron Technology
Size 158.01 KB
Etron Technology

EM658160 Overview

Key Features

  • /CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved
  • Individual byte write mask control
  • DM Write Latency = 0
  • Auto Refresh and Self Refresh
  • 4096 refresh cycles / 64ms
  • Precharge & active power down
  • Power supplies: VDD = 3.3V ± 0.3V VDDQ = 2.5V ± 0.2V
  • Interface: SSTL_2 I/O Interface
  • Package: 66 Pin TSOP II, 0.65mm pin pitch