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EM567169BC - 2M x 16 Pseudo SRAM

General Description

Symbol A0 A20 DQ0 DQ15 CE1# CE2 OE# WE# LB# UB# VCC/VCCQ VSS/VSSQ Function Address Inputs Data Inputs/Outputs Chip Enable Standby Mode Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground G DQ15 A19 A12 A13 WE# DQ7 H A18 A8 A9 A10 A11

Key Features

  • Organized as 2M words by 16 bits.
  • Fast Cycle Time : 60/65/70/85ns.
  • Fast Page Cycle Time : 18/20/25/30ns.
  • Page Read Operation by 8 words.
  • Standby Current(ISB1): 100uA.
  • Deep power-down Current : 10uA (Memory cell data invalid).
  • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15).
  • Compatible with low power SRAM.
  • Single Power Supply Voltage : 3.0V±0.3V.
  • Package Type : 48-ball FBGA, 6x8mm EM567169BC 2M x 16 Pseud.

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Full PDF Text Transcription for EM567169BC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EM567169BC. For precise diagrams, and layout, please refer to the original PDF.

EtronTech Features • Organized as 2M words by 16 bits • Fast Cycle Time : 60/65/70/85ns • Fast Page Cycle Time : 18/20/25/30ns • Page Read Operation by 8 words • Standby ...

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Cycle Time : 18/20/25/30ns • Page Read Operation by 8 words • Standby Current(ISB1): 100uA • Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM • Single Power Supply Voltage : 3.0V±0.3V • Package Type : 48-ball FBGA, 6x8mm EM567169BC 2M x 16 Pseudo SRAM Rev 0.6 Apr.

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