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EM639325 - 4M x 32 bit Synchronous DRAM

Key Features

  • Fast access time from clock: 5/5.4/5.4 ns.
  • Fast clock rate: 200/166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • Four internal banks (1M x 32-bit x 4bank).
  • Programmable Mode - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential & Interleaved - Burst-Read-Single-Write.
  • Burst stop function.
  • Individual byte controlled by DQM0-3.
  • Auto Refresh and Self Refresh.

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Other Datasheets by Etron Technology

Part Number Description
EM639165 8M x 16 bit Synchronous DRAM
EM639165TS 8M x 16 bit Synchronous DRAM
EM636165-XXI 1Mega x 16 Synchronous DRAM
EM638165 4M x 16 bit Synchronous DRAM
EM638165TS 4M x 16 bit Synchronous DRAM
EM638325 2M x 32 Synchronous DRAM
EM63A165 16M x 16 bit Synchronous DRAM
EM63A165TS 16M x 16 bit Synchronous DRAM
EM63A325 8M x 32 bit Synchronous DRAM
EM63B165 32M x 16 bit Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EtronTech EM639325 4M x 32 bit Synchronous DRAM (SDRAM) Advance (Rev. 2.1, Aug. /2015) Features • Fast access time from clock: 5/5.4/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (1M x 32-bit x 4bank) • Programmable Mode - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential & Interleaved - Burst-Read-Single-Write • Burst stop function • Individual byte controlled by DQM0-3 • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • Single 3.3V ±0.3V power supply • Industrial Temperature: TA = -40~85°C • Interface: LVTTL • 86-pin 400 mil plastic TSOP II package - Pb free and Halogen free • 90-ball 8 x 13 x 1.