Datasheet Summary
EtronTech
32M x 16 Mobile DDR Synchronous DRAM (SDRAM)
Etron Confidential
Advanced (Rev. 1.0 Mar. /2009)
Features
- Fast clock rate: 166/133 MHz
- Differential Clock CK & CK
- Bi-directional DQS
- Four internal banks, 8M x 16-bit for each bank
- Edge-aligned with read data, centered in write data
- Programmable Mode and Extended Mode Registers
- CAS Latency: 2, or 3
- Burst length: 2, 4, 8, or 16
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature pensated Self
Refresh)
- DS (Drive Strength)
- Individual byte writes mask control
- DM Write Latency = 0
- Precharge Standby Current = 300 µA
- Self Refresh Current = 700 µA
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