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EM6AB080 - 64M x 8 bit DDR Synchronous DRAM

Features

  • Fast clock rate: 250/200MHz.
  • Differential Clock CK & CK.
  • Bi-directional DQS.
  • DLL enable/disable by EMRS.
  • Fully synchronous operation.
  • Internal pipeline architecture.
  • Four internal banks, 16M x 8-bit for each bank.
  • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte write mask control.
  • DM Write Latency = 0.

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Datasheet preview – EM6AB080

Datasheet Details

Part number EM6AB080
Manufacturer Etron Technology
File Size 553.81 KB
Description 64M x 8 bit DDR Synchronous DRAM
Datasheet download datasheet EM6AB080 Datasheet
Additional preview pages of the EM6AB080 datasheet.

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Full PDF Text Transcription

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EtronTech EM6AB080 Etron Confidential 64M x 8 bit DDR Synchronous DRAM (SDRAM) Advanced (Rev. 1.1, Dec. /2013) Features • Fast clock rate: 250/200MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 16M x 8-bit for each bank • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved • Individual byte write mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 8192 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD & VDDQ = 2.5V 0.2V • Interface: SSTL_2 I/O Interface • Package: 66 Pin TSOP II, 0.
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