EM6OE16NWBB
EM6OE16NWBB is 256M x 16 bit DDR4 Synchronous DRAM manufactured by Etron Technology.
Features
- JEDEC Standard pliant
- Fast clock rate: 1200/1333/1600MHz
- Power supplies:
- VDD & VDDQ = +1.2V ± 0.06V
- VPP = +2.5V -0.125V / +0.25V
- Operating temperature range: (mercial)
- Normal operating temperature: TC = 0~85°C
- Extended temperature: TC = 85~95°C
- Supports JEDEC clock jitter specification
- Bidirectional differential data strobe, DQS &DQS#
- Differential Clock, CK & CK#
- 8 internal banks: 2 groups of 4 banks each
- Separated IO gating structures by Bank Group
- 8n-bit prefetch architecture
- Precharge & Active power down
- Auto Refresh and Self Refresh
- Low-power auto self refresh (LPASR)
- Self Refresh Abort
- Fine Granularity Refresh
- Dynamic ODT (RTT_PARK & RTT_Nom & RTT_WR)
- Write Leveling
- DQ Training via MPR
- Programmable preamble is supported both of 1t CK and 2t CK mode
- mand/Address (CA) Parity
- Data bus write cyclic redundancy check (CRC)
- Boundary Scan Mode
- Internal VREFDQ Training
- Read Preamble Training
- Control Gear Down Mode
- Per DRAM Addressability (PDA)
- Output Driver Impedance Control
- Dynamic on-die termination (ODT)
- Input Data Mask (DM) and Data Bus Inversion (DBI)
- ZQ Calibration
- mand/Address latency (CAL)
- Asynchronous Reset
- DLL enable/disable
- Burst Length (BL8/BC4/BC4 or 8 on the fly)
- Burst type: Sequential /...
