FLL200IB-1 Datasheet | Eudyna Devices

FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET Features - - - - - High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent...