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FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET

General Description

The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Key Features

  • High Output Power: P1dB = 42.5dBm (Typ. ) High Gain: G1dB = 13.0dB (Typ. )@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ. ) Proven Reliability Hermetically Sealed Package.

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Datasheet Details

Part number FLL200IB-1
Manufacturer Eudyna Devices
File Size 183.22 KB
Description (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLL200IB-1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.