Eudyna Devices FLL200IB-2
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. The drain-source operating voltage (VDS) should not exceed 10 volts.| Part No. | FLL200IB-2 |
|---|---|
| Datasheet | FLL200IB-2 Download |
| Manufacturer |  Eudyna Devices |
| Description | L-Band Medium & High Power GaAs FET |
| Buy | Stock & Price |
FEATURES
●●
●
●
● High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition Rating 15 -5 Unit V V W °C °C Tc = 25°C 83.3 -65 to +175 175 Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. 2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.ELECTRICAL CHARACTERISTICS
(Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P.
