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FLL200IB-2 Datasheet (fll200ib-1/-2/-3) L-band Medium & High Power Gaas Fet

Manufacturer: Eudyna Devices

Overview: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number FLL200IB-2
Manufacturer Eudyna Devices
File Size 183.22 KB
Description (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
Datasheet FLL200IB-2 FLL200IB-1 Datasheet (PDF)

General Description

The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

The performance in multitone environments for Class AB operation make them ideally suited for base station applications.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 42.5dBm (Typ. ) High Gain: G1dB = 13.0dB (Typ. )@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ. ) Proven Reliability Hermetically Sealed Package.

FLL200IB-2 Distributor