FLM1011-20F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B=43.0d Bm(Typ.) - High Gain: G1d B=7.0d B(Typ.) - High PAE: ηadd=27%(Typ.) - Broad Band: 10.7～11.7GHz - Impedance Matched Zin/Zout = 50Ω - Hermetically Sealed Package X,Ku-Band Internally Matched FET DESCRIPTION The FLM1011-20F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage -5 Total Power Dissipation Storage Temperature Tstg -65 to +175 o C Channel Temperature Tch 175 o C REMENDED OPERATING CONDITION(Case Temperature Tc=25°C) Item Symbol Condition Limit DC Input Voltage ≤10 Forward Gate Current RG=25Ω...