BSM75GP60
BSM75GP60 is IGBT manufactured by Eupec GmbH.
.Data Sheet.co.kr
Technische Information / Technical Information
IGBT-Module IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stoßstrom Grenzwert surge forward current Grenzlastintegral I t
- value
VRRM I FRMSM TC = 80°C t P = 10 ms, Tvj = t P = 10 ms, Tvj = 25°C 25°C Id I FSM I t
1600 60 75 500 400 1250 800
V A A A A As As
2 2 t P = 10 ms, Tvj = 150°C t P = 10 ms, Tvj = 150°C
Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t
- value Tc = 70 °C t P = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF I FRM I 2t 75 150 920 A A A2s Tc = 70 °C TC = 25 °C t P = 1 ms, TC = 25°C TC = 70 °C VCES I C,nom. IC I CRM Ptot VGES 600 75 100 150 310 +/- 20V V A A A W V
Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Andreas Schulz approved by: Robert Severin Tc = 70 °C t P = 1 ms IF I FRM 17,5 35 A A TC = 80 °C TC = 25 °C t P = 1 ms, TC = 80°C TC = 25°C VCES I C,nom. IC I CRM...
