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EIA1111-2 - 11.0-11.5 GHz 2-Watt Internally Matched Power FET

Features

  • 11.0.
  • 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Hermetic Metal Flange Package .650±.008 .512 GATE .319 DRAIN YYWW SN .094 .382 .022 .04 .004 .070 ±.008 .129 ALL.

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Datasheet Details

Part number EIA1111-2
Manufacturer Excelics Semiconductor
File Size 102.24 KB
Description 11.0-11.5 GHz 2-Watt Internally Matched Power FET
Datasheet download datasheet EIA1111-2 Datasheet
Additional preview pages of the EIA1111-2 datasheet.

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Full PDF Text Transcription

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EIA1111-2 UPDATED 02/17/2006 11.0-11.5 GHz 2-Watt Internally Matched Power FET .060 MIN. Excelics EIA1111-2 .060 MIN. FEATURES • • • • • • 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Hermetic Metal Flange Package .650±.008 .512 GATE .319 DRAIN YYWW SN .094 .382 .022 .04 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f = 11.0-11.
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