EIA1111-2 Datasheet | Excelics Semiconductor

FEATURES - - - - - - 11.0- 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 d Bm Output Power at 1d B pression 11.0 d B Power Gain at 1d B pression 32% Power Added Efficiency Hermetic Metal Flange Package .650±.008 .512 GATE .319 DRAIN YYWW SN .094 .382 .022 .04 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800m A Gain at 1d B pression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800m A Gain Flatness f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800m A Power Added Efficiency at 1d B pression f = 11.0-11.5GHz VDS = 8 V, IDSQ ≈ 800m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 33.0 10.0 34.0 11.0 UNITS d Bm d B ±0.6 32 900 1400 -1.0 10 1100 1800 -2.5 11 o d B % m A m A V C/W f = 11.0-11.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 14 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 -5 21.6m A -3.6m A 32.5d Bm 175 C o -65 to +175 C o CONTINUOUS2 8V -3V 7.2m A -1.2m A @ 3d B pression 175 o C -65 to +175 o C 13W Vds Vgs Igsf Igsr Pin Tch Tstg .. Pt 13W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 1 Revised February...