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EIA1114-4 - 11.0-14.0 GHz 4-Watt Internally Matched Power FET

Features

  • 11.0.
  • 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 25.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics EIA1114-4 YYWW SN .094 .382 .060 MIN. .650±.008 .512 GATE .319 DRAIN .022 .045 .004 .070 ±.008 .129 ALL.

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Datasheet Details

Part number EIA1114-4
Manufacturer Excelics Semiconductor
File Size 103.15 KB
Description 11.0-14.0 GHz 4-Watt Internally Matched Power FET
Datasheet download datasheet EIA1114-4 Datasheet
Additional preview pages of the EIA1114-4 datasheet.

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Full PDF Text Transcription

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EIA1114-4 UPDATED 07/25/2006 11.0-14.0GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • • 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 25.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics EIA1114-4 YYWW SN .094 .382 .060 MIN. .650±.008 .512 GATE .319 DRAIN .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 1500mA Gain at 1dB Compression f = 11.0-14.
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