EIA1114-4 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - - 11.0- 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 7.0 d B Power Gain at 1d B pression 25% Power Added Efficiency -36 d Bc IM3 at Po = 25.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics YYWW SN .094 .382 .060 MIN. .650±.008 .512 GATE .319 DRAIN .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 1500m A Gain at 1d B pression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 1500m A Gain Flatness f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 1500m A Power Added Efficiency at 1d B pression f = 11.0-14.0GHz VDS = 8 V, IDSQ ≈ 1500m A Drain Current at 1d B pression f = 11.0-14.0GHz Caution! ESD sensitive device. MIN 35.5 6.0 36.5 7.0 UNITS d Bm d B ±0.8 25 1700 -36 2880 -1.0 5.5 3600 -2.5 6.0 o d B % 2000 m A d Bc m A V C/W Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 d Bm S.C.L2 VDS = 8 V, IDSQ ≈ 65% IDSS f = 14.0GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 29 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10 -5 43.2m A -7.2m A 35.5d Bm o 175 C o -65 to +175 C CONTINUOUS2 8V -3V 14.4m A -2.4m A @ 3d B pression 175 o C -65 to +175 o C...