EIA1616-8P-2 - 16.2-16.4GHz 8-Watt Internally Matched Power FET

Features

16.2.
16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Min. Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH EIA1616-8P-2.

Excelics Semiconductor

Datasheet Details

Part number	EIA1616-8P-2
Manufacturer	Excelics Semiconductor
File Size	113.41 KB
Description	16.2-16.4GHz 8-Watt Internally Matched Power FET
Datasheet	EIA1616-8P-2 Datasheet
Additional preview pages of the EIA1616-8P-2 datasheet.

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Full PDF Text Transcription

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EIA1616-8P-2 UPDATED 11/09/06 16.2-16.4GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 16.2– 16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Min. Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH EIA1616-8P-2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain Flatness f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 8 V, IDSQ ≈ 2200mA f = 16.2-16.

Published: Feb 17, 2011 |