EIA1616-8P-2
EIA1616-8P-2 is 16.2-16.4GHz 8-Watt Internally Matched Power FET manufactured by Excelics Semiconductor.
UPDATED 11/09/06
16.2-16.4GHz 8-Watt Internally Matched Power FET
Features
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- 16.2- 16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB pression 6.0 dB Min. Power Gain at 1dB pression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB pression f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain at 1dB pression f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain Flatness f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB...
