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EIA1616-8P - 16.2-16.4GHz 8W Internally Matched Power FET

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Part number EIA1616-8P
Manufacturer Excelics Semiconductor
File Size 48.79 KB
Description 16.2-16.4GHz 8W Internally Matched Power FET
Datasheet download datasheet EIA1616-8P Datasheet
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Excelics • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 20% TYPICAL) +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1616-8P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=16.2-16.4GHz MIN 38 5 TYP 39 6 20 3520 f=16.2-16.4GHz 4400 5760 6000 -1.0 -13 -15 2.3 o MAX UNIT dBm dB % mA dBm P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=16.2-16.4GHz Vds=8V, Idsq=0.
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