EIA5060-1S - 5.0-6.0GHz 1W Internally Matched Power FET

Features

HIGH PAE(35%.

Excelics Semiconductor

Datasheet Details

Part number	EIA5060-1S
Manufacturer	Excelics Semiconductor
File Size	43.93 KB
Description	5.0-6.0GHz 1W Internally Matched Power FET
Datasheet	EIA5060-1S Datasheet
Additional preview pages of the EIA5060-1S datasheet.

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Full PDF Text Transcription

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Excelics TENTATIVE DATA SHEET EIA5060-1S 5.0-6.0GHz, 1W Internally Matched Power FET • • • • • 5.0-6.0GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE(35% TYPICAL) 31.0dBm TYPICAL P1dB OUTPUT POWER 13dB TYPICAL G1dB POWER GAIN NON-HERMETIC 180 MIL METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 O C) EIA0506-1P180F SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.0-6.0GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=5.0-6.0GHz MIN 29.5 11 TYP 31.0 13 MAX UNIT dBm dB P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=5.06.0GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss rd 35 440 37 550 720 760 -1.

Published: Feb 17, 2011 |