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EIA7785-2 - 7.70-8.50GHz 2-Watt Internally Matched Power FET

Features

  • 7.70.
  • 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34 dBm Output Power at 1dB Compression 12.5 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .650±.008 .512 EIA7785-2 GATE Excelics YYWW .060 MIN. DRAIN .319 .022 SN .094 .382 .004 .129 .070 ±.008 .045 ALL.

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Datasheet Details

Part number EIA7785-2
Manufacturer Excelics Semiconductor
File Size 107.02 KB
Description 7.70-8.50GHz 2-Watt Internally Matched Power FET
Datasheet download datasheet EIA7785-2 Datasheet
Additional preview pages of the EIA7785-2 datasheet.

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Full PDF Text Transcription

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EIA7785-2 UPDATED 11/16/2006 7.70-8.50GHz 2-Watt Internally Matched Power FET FEATURES • • • • • • • 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34 dBm Output Power at 1dB Compression 12.5 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .650±.008 .512 EIA7785-2 GATE Excelics YYWW .060 MIN. DRAIN .319 .022 SN .094 .382 .004 .129 .070 ±.008 .045 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 8V, IDSQ ≈ 800mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 8V, IDSQ ≈ 800mA Gain Flatness f = 7.70-8.
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