Datasheet4U Logo Datasheet4U.com

EIA7785-6 - 7.70-8.50GHz 6-Watt Internally Matched Power FET

Features

  • 7.70.
  • 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 36% Power Added Efficiency Hermetic Metal Flange Package .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

📥 Download Datasheet

Datasheet preview – EIA7785-6

Datasheet Details

Part number EIA7785-6
Manufacturer Excelics Semiconductor
File Size 103.37 KB
Description 7.70-8.50GHz 6-Watt Internally Matched Power FET
Datasheet download datasheet EIA7785-6 Datasheet
Additional preview pages of the EIA7785-6 datasheet.
Other Datasheets by Excelics Semiconductor

Full PDF Text Transcription

Click to expand full text
EIA7785-6 UPDATED 11/30/2005 7.70-8.50 GHz 6-Watt Internally Matched Power FET Excelics EIA7785-6 .827±.010 .669 .120 MIN FEATURES • • • • • • 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 36% Power Added Efficiency Hermetic Metal Flange Package .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ ≈ 2000mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ ≈ 2000mA Gain Flatness f = 7.70-8.
Published: |