EIC1414-12 Datasheet | Excelics Semiconductor

.. ISSUED 6/30/2006 14.0-14.5 GHz 12-Watt Internally Matched Power FET Excelics .827±.010 .669 .120 M IN .120 M IN Features - - - - - - 14.0- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 d Bm Output Power at 1d B pression 5.0 d B Power Gain at 1d B pression 20% Power Added Efficiency Hermetic Metal Flange Package .024 .421 .125 .508±.008 .442 .168±.010 ALL DIM ENSIO NS IN IN CHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500m A Gain at 1d B pression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500m A Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 3500m A f = 14.0-14.5GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. 1,2 Caution! ESD sensitive device. MIN 39.5 4.0 40.5 5.0 UNITS d Bm d B ±0.6 20 3600 6000 -2.5 2.3 4200 7500 -4.0 2.6 o d B % m A m A V C/W f = 14.0-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 m A Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case...