EIC1414-8 Datasheet | Excelics Semiconductor

.. ISSUED 6/30/2006 14.0-14.5 GHz 8-Watt Internally Matched Power FET Features - - - - - - 14.0- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 d Bm Output Power at 1d B pression 5.0 d B Power Gain at 1d B pression 24% Power Added Efficiency Hermetic Metal Flange Package .060 MIN. Excelics .060 MIN. .650±.008 .512 GATE .319 DRAIN .022 .094 .382 .004 .129 .045 .070 ±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 2200m A f = 14.0-14.5GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 38.5 4.0 39.0 5.0 UNITS d Bm d B ±0.6 24 2300 4000 -2.5 3.5 2600 5000 -4.0 4.0 o d B % m A m A V C/W f = 14.0-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1) Tested with 100 Ohm gate...