EIC1415-3 Datasheet | Excelics Semiconductor

.. UPDATED 11/22/2004 - 15.35GHz 3-Watt Internally Matched Power FET .060 MIN. Features - - - - - - - - 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.5 d Bm Output Power at 1d B pression 6.0 d B Power Gain at 1d B pression 25% Power Added Efficiency -42 d Bc IM3 at Po = 23.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics GATE DRAIN .060 MIN. .650±.008 .512 .319 .022 YM SN .094 .382 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 Caution! ESD sensitive device. MIN 33.5 5.0 TYP 34.5 6.0 ±0.6 25 900 -38 -42- 1400 -2.5 8.0 1800 -4.0 9.0 o PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 800m A Gain at 1d B pression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 800m A Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 800m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 800m A f = 14.40-15.35GHz Drain Current at 1d B pression f = 14.40-15.35GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 23.5 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.35GHz UNITS d Bm d B d B % 1100 m A d Bc m A V C/W IDSS VP RTH Notes: 1. - Saturated Drain Current Pinch-off Voltage Thermal...