EIC1415A-8 Datasheet | Excelics Semiconductor

.. ISSUED DATE: 09/06/2007 14.40-15.40GHz 8-Watt Internally-Matched Power FET Features - - - - - - - 14.40- 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 d Bm Output Power at 1d B pression 5.5 d B Power Gain at 1d B pression 26% Power Added Efficiency -42 d Bc IM3 at Po = 28.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f =14.4-15.4GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f =14.4-15.4GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.4GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38.0 4.5 TYP 39.0 5.5 ±0.6 26 2300 -38 -42 4000 -2.5 3.5 5000 -4.0 4.0 o UNITS d Bm d B d B % 2600 m A d Bc m A V C/W VDS = 3 V, IDS = 40 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...