EIC1415A-4 Datasheet | Excelics Semiconductor

.. ISSUED 08/21/2007 14.40-15.40GHz 4-Watt Internally Matched Power FET Excelics GATE DRAIN Features - - - - - - - - 14.40- 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 d Bm Output Power at 1d B pression 5.0 d B Power Gain at 1d B pression 25% Power Added Efficiency -43 d Bc IM3 at Po = 25.0 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .060 MIN. .650±.008 .512 .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1100m A f = 14.40-15.40GHz Drain Current at 1d B pression f = 14.40-15.40GHz Caution! ESD sensitive device. MIN 35.5 4.5 36.0 5.0 UNITS d Bm d B ±0.6 25 1100 -40 -43 2080 -2.5 5.5 2880 -4.0 6.0 o d B % 1400 m A d Bc m A V...