EIC1415-4 Datasheet | Excelics Semiconductor

.. 14.40-15.35 GHz 4-Watt Internally-Matched Power FET Features - - - - - - - - 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 d Bm Output Power at 1d B pression 5.0 d B Power Gain at 1d B pression 25% Power Added Efficiency -43 d Bc IM3 at Po = 25.0 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC1415-4 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier Features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1100m A f = 14.40-15.35GHz Drain Current at 1d B pression f = 14.40-15.35GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.0 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.35 GHz MIN 35.5 4.5 TYP 36.0 5.0 UNITS d Bm d B ±0.6 25 1100 -40 -43 2080 -2.5 5.5 2880 -4.0 6.0 o d B % 1300 m A d Bc m A V C/W Saturated Drain Current Pinch-off Voltage Thermal Resistance VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 m A Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revised December...