EIC4953-8 Datasheet | Excelics Semiconductor

.. ISSUED 02/28/2008 4.90-5.30 GHz 8-Watt Internally Matched Power FET Features - - - - - - - 4.90- 5.30GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 10.5 d B Power Gain at 1d B pression 35% Power Added Efficiency -46 d Bc IM3 at PO = 28.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f = 4.90-5.30GHz Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 d Bm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 5.30GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2. S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 38.5 9.5 39.5 10.5 UNITS d Bm d B ±0.6 35 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o d B % 2600 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1. Tested with 100 Ohm gate resistor. 3. Overall Rth depends on case...