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EIC4953-8
ISSUED 02/28/2008
4.90-5.30 GHz 8-Watt Internally Matched Power FET
FEATURES
• • • • • • • 4.90–5.30GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 4.90-5.30GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 4.
EIC4953-8 Datasheet
