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EMB02N03HS - MOSFET

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Part number EMB02N03HS
Manufacturer Excelliance MOS
File Size 211.33 KB
Description MOSFET
Datasheet download datasheet EMB02N03HS Datasheet
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB02N03HS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=64A, RG=25Ω Repetitive Avalanche Energy3 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 100 67 400 64 204 102 50 20 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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