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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
2.5mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
EMB02N03HS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=64A, RG=25Ω
Repetitive Avalanche Energy3
L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±20 100 67 400 64 204 102 50 20 ‐55 to 150
100% UIS testing in condition of VD=15V, L=0.
EMB02N03HS Datasheet
