Datasheet4U Logo Datasheet4U.com

EMB03P03A - MOSFET

📥 Download Datasheet

Datasheet preview – EMB03P03A

Datasheet Details

Part number EMB03P03A
Manufacturer Excelliance MOS
File Size 202.41 KB
Description MOSFET
Datasheet download datasheet EMB03P03A Datasheet
Additional preview pages of the EMB03P03A datasheet.

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMB03P03H - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB03K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB03N03A - MOSFET
  • EMB03N03H - MOSFET
  • EMB03N03HR - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB03N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB03N06HS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
EMB03P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.3mΩ ID ‐85A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐85 ID TC = 100 °C ‐65 IDM ‐260 Avalanche Current IAS ‐80 Avalanche Energy L = 0.1mH, ID=‐80A, RG=25Ω EAS 320 Repetitive Avalanche Energy2 L = 0.05mH EAR 160 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 121 48 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.
Published: |